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SI5441BDC Scheda tecnica(PDF) 1 Page - Vishay Siliconix

Il numero della parte SI5441BDC
Spiegazioni elettronici  P-Channel 2.5-V (G-S) MOSFET
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SI5441BDC Scheda tecnica(HTML) 1 Page - Vishay Siliconix

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FEATURES
D TrenchFETr Power MOSFET
Si5441BDC
Vishay Siliconix
New Product
Document Number: 73207
S-42240—Rev. A, 13-Dec-04
www.vishay.com
1
P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
Qg (Typ)
0.045 @ VGS = −4.5 V
−6.1
−20
0.052 @ VGS = −3.6 V
−5.7
11.5
0.080 @ VGS = −2.5 V
−4.6
1206-8 ChipFE
Tr
D
D
D
G
D
D
D
S
1
Bottom View
Marking Code
BK XX
Lot Traceability
and Date Code
Part # Code
S
G
D
P-Channel MOSFET
Ordering Information:
Si5441BDC-T1—E3
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
VDS
−20
V
Gate-Source Voltage
VGS
"12
V
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
ID
−6.1
−4.4
Continuous Drain Current (TJ = 150_C)a
TA = 85_C
ID
−4.4
−3.2
A
Pulsed Drain Current
IDM
−20
A
Continuous Source Currenta
IS
−2.1
−1.1
Maximum Power Dissipationa
TA = 25_C
PD
2.5
1.3
W
Maximum Power Dissipationa
TA = 85_C
PD
1.3
0.7
W
Operating Junction and Storage Temperature Range
TJ, Tstg
−55 to 150
_C
Soldering Recommendations (Peak Temperature)b, c
260
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Mi
J
ti
t A bi ta
t v 5 sec
R
48
50
Maximum Junction-to-Ambienta
Steady State
RthJA
85
95
_C/W
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
17
20
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder
interconnection.
c.
Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.


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