SI4340CDY datasheet(2/12 Pages) VISHAY

Il numero della parte	SI4340CDY

Spiegazioni elettronici	Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode

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Document Number: 68398

S-81547-Rev. B, 07-Jul-08

Vishay Siliconix

Si4340CDY

New Product

Notes:

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

Ch-1

20

V

VGS = 0 V, ID = 250 µA

Ch-2

20

VDS Temperature Coefficient

ΔV

DS/TJ

ID = 250 µA

Ch-1

20

mV/°C

ID = 25 mA

Ch-2

22

VGS(th) Temperature Coefficient

ΔV

GS(th)/TJ

ID = 250 µA

Ch-1

- 5.5

ID = 25 mA

Ch-2

- 2.5

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

Ch-1

1

3

V

VDS = VGS, ID = 250 µA

Ch-2

0.8

2.2

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

Ch-1

100

nA

VDS = 0 V, VGS = ± 16 V

Ch-2

100

Zero Gate Voltage Drain Current

IDSS

VDS = 20 V, VGS = 0 V

Ch-1

1

µA

VDS = 20 V, VGS = 0 V

Ch-2

100

VDS = 20 V, VGS = 0 V, TJ = 85 °C

Ch-1

15

VDS = 20 V, VGS = 0 V, TJ = 85 °C

Ch-2

10 000

On-State Drain Currentb

ID(on)

VDS ≥ 5 V, VGS = 10 V

Ch-1

20

A

VDS ≥ 5 V, VGS = 10 V

Ch-2

30

Drain-Source On-State Resistanceb

RDS(on)

VGS = 10 V, ID = 11.5 A

Ch-1

0.0077 0.0094

Ω

VGS = 10 V, ID = 15.2 A

Ch-2

0.0065

0.008

VGS = 4.5 V, ID = 10 A

Ch-1

0.010

0.0125

VGS = 4.5 V, ID = 14 A

Ch-2

0.0075 0.0095

Forward Transconductanceb

gfs

VDS = 10 V, ID = 11.5 A

Ch-1

45

S

VDS = 10 V, ID = 15.2 A

Ch-2

73

Dynamica

Input Capacitance

Ciss

Channel-1

VDS = 10 V, VGS = 0 V, f = 1 MHz

Channel-2

VDS = 10 V, VGS = 0 V, f = 1 MHz

Ch-1

1300

pF

Ch-2

1900

Output Capacitance

Coss

Ch-1

330

Ch-2

500

Reverse Transfer Capacitance

Crss

Ch-1

150

Ch-2

160

Total Gate Charge

Qg

VDS = 10 V, VGS = 10 V, ID = 11.5 A

Ch-1

21

32

nC

VDS = 10 V, VGS = 10 V, ID = 15.2 A

Ch-2

31

47

Channel-1

VDS = 10 V, VGS = 4.5 V, ID = 11.5 A

Channel-2

VDS = 10 V, VGS = 4.5 V, ID = 15.2 A

Ch-1

9.6

15

Ch-2

14.1

22

Gate-Source Charge

Qgs

Ch-1

4

Ch-2

5

Gate-Drain Charge

Qgd

Ch-1

3

Ch-2

3.5

Gate Resistance

Rg

f = 1 MHz

Ch-1

0.65

1.2

Ω

Ch-2

1.4

2.8

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