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SI3851DV Scheda tecnica(PDF) 4 Page - Vishay Siliconix |
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SI3851DV Scheda tecnica(HTML) 4 Page - Vishay Siliconix |
4 / 7 page Si3851DV Vishay Siliconix New Product www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70978 S-61845—Rev. A, 11-Oct-99 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET 1.2 1.5 0.1 1 10 0.00 0.3 0.6 0.9 TJ = 25_C TJ = 150_C Source-Drain Diode Forward Voltage VSD – Source-to-Drain Voltage (V) –0.4 –0.2 0.0 0.2 0.4 0.6 –50 –25 0 25 50 75 100 125 150 0 0.1 0.2 0.3 0.4 0.5 0.6 024 68 10 VGS – Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage TJ – Temperature (_C) ID = 250 mA ID = 1.8 A ID = 1 A 0.01 0 1 6 8 2 4 10 30 0.1 Single Pulse Power, Junction-to-Ambient Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) 2 1 0.1 0.01 10–3 10–2 1 10 600 10–1 10–4 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 100 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 130_C/W 3. TJM – TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM |
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