Motore di ricerca datesheet componenti elettronici |
|
SI3805DV-T1-E3 Scheda tecnica(PDF) 5 Page - Vishay Siliconix |
|
SI3805DV-T1-E3 Scheda tecnica(HTML) 5 Page - Vishay Siliconix |
5 / 10 page Document Number: 68912 S-82297-Rev. A, 22-Sep-08 www.vishay.com 5 Vishay Siliconix Si3805DV New Product MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted Soure-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 150 °C 1 VSD - Source-to-Drain Voltage (V) 0.1 10 TJ = 25 °C 0.5 0.7 0.9 1.1 1.3 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.00 0.04 0.08 0.12 0.16 0.20 036 9 12 VGS - Gate-to-Source Voltage (V) TJ = 25 °C TJ = 125 °C ID = - 3 A 0.01 0 1 6 8 2 4 10 0.1 Time (s) Safe Operating Area, Junction-to-Case VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 1 0.1 1 10 100 0.01 10 0.1 TA = 25 °C Single Pulse BVDSS Limited Limited by R * DS(on) 1 ms 10 ms 1 s,10 s DC 100 ms |
Codice articolo simile - SI3805DV-T1-E3 |
|
Descrizione simile - SI3805DV-T1-E3 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEETIT.COM |
Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |