SI3805DV-T1-E3 datasheet(5/10 Pages) VISHAY

Il numero della parte	SI3805DV-T1-E3

Spiegazioni elettronici	P-Channel 20-V (D-S) MOSFET with Schottky Diode

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Produttore elettronici	VISHAY [Vishay Siliconix]

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Document Number: 68912

S-82297-Rev. A, 22-Sep-08

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5

Vishay Siliconix

Si3805DV

New Product

MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted

Soure-Drain Diode Forward Voltage

Threshold Voltage

0.0

0.2

0.4

0.6

0.8

1.0

1.2

TJ = 150 °C

1

VSD - Source-to-Drain Voltage (V)

0.1

10

TJ = 25 °C

0.5

0.7

0.9

1.1

1.3

- 50

- 25

0

25

50

75

100

125

150

ID = 250 µA

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.00

0.04

0.08

0.12

0.16

0.20

036

9

12

VGS - Gate-to-Source Voltage (V)

TJ = 25 °C

TJ = 125 °C

ID = - 3 A

0.01

0

1

6

8

2

4

10

0.1

Time (s)

Safe Operating Area, Junction-to-Case

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

100

1

0.1

1

10

100

0.01

10

0.1

TA = 25 °C

Single Pulse

BVDSS

Limited

Limited by R

*

DS(on)

1 ms

10 ms

1 s,10 s

DC

100 ms

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