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SI3465DV Scheda tecnica(PDF) 3 Page - Vishay Siliconix |
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SI3465DV Scheda tecnica(HTML) 3 Page - Vishay Siliconix |
3 / 6 page Si3465DV Vishay Siliconix New Product Document Number: 72787 S-40410—Rev. A, 15-Mar-04 www.vishay.com 3 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 50 100 150 200 250 300 350 400 04 8 12 16 20 0.6 0.8 1.0 1.2 1.4 1.6 −50 −25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0.0 0.1 0.2 0.3 0.4 0.5 0 2468 10 VDS − Drain-to-Source Voltage (V) Crss Coss Ciss VDS = 10 V ID = 4 A ID − Drain Current (A) VGS = 10 V ID = 4 A VGS = 10 V Gate Charge On-Resistance vs. Drain Current Qg − Total Gate Charge (nC) Capacitance On-Resistance vs. Junction Temperature TJ − Junction Temperature (_C) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.0 0.1 0.2 0.3 0.4 0.5 0 2468 10 TJ = 150_C ID = 4 A 30 10 1 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) VGS = 4.5 V TJ = 25_C |
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