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SI3447CDV-T1-E3 Scheda tecnica(PDF) 4 Page - Vishay Siliconix |
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SI3447CDV-T1-E3 Scheda tecnica(HTML) 4 Page - Vishay Siliconix |
4 / 7 page www.vishay.com 4 Document Number: 69784 S-80189-Rev. A, 04-Feb-08 Vishay Siliconix Si3447CDV New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 150 °C 10 VSD - Source-to-Drain Voltage (V) TJ = 25 °C 1 100 0.2 0.3 0.4 0.5 0.6 0.7 0.8 - 50 -25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0 0.03 0.06 0.09 0.12 0.15 0 1 234 5 VGS - Gate-to-Source Voltage (V) TA = 25 °C TA = 125 °C ID =6.3 A 0 5 10 15 20 25 Time (s) 10 1000 0.1 0.01 0.001 100 1 Safe Operating Area VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which rDS(on) is specified 100 1 0.1 1 10 100 0.01 10 0.1 TA = 25 °C Single Pulse 10 ms 100 ms DC 1s,10s Limited byrDS(on)* 1ms BVDSS Limited 100 µs |
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