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Document Number: 72380

S-82114-Rev. C, 08-Sep-08

Vishay Siliconix

Si3440DV

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Gate Threshold Voltage

24

V

Gate-Body Leakage

± 100

nA

Zero Gate Voltage Drain Current

1

µA

5

4A

0.310

0.375

Ω

0.330

0.400

4.1

S

0.8

1.2

V

Total Gate Charge

5.4

8

nC

Gate-Source Charge

1.1

Gate-Drain Charge

1.9

Gate Resistance

f = 1 MHz

4

9

15

Ω

Turn-On Delay Time

815

ns

Rise Time

10

15

Turn-Off Delay Time

20

30

Fall Time

15

25

Source-Drain Reverse Recovery Time

40

60

Output Characteristics

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4 V

3 V

Transfer Characteristics

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5

- 55 °C

25 °C