SI2333CDS-T1-E3 datasheet(1/6 Pages) VISHAY

Il numero della parte	SI2333CDS-T1-E3

Spiegazioni elettronici	P-Channel 12-V (D-S) MOSFET

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Vishay Siliconix

Si2333CDS

Document Number: 68717

S-81445-Rev. A, 23-Jun-08

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1

P-Channel 12-V (D-S) MOSFET

FEATURES

• TrenchFET® Power MOSFET

APPLICATIONS

•

Load Switch

•

PA Switch

MOSFET PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

a

Qg (Typ.)

- 12

0.035 at VGS = - 4.5 V

- 5.1

9 nC

0.045 at VGS = - 2.5 V

- 4.5

0.059 at VGS = - 1.8 V

- 3.9

G

TO-236

(SOT-23)

S

D

Top View

2

3

1

Si2333CDS (O3)*

* Marking Code

Ordering Information: Si2333CDS-T1-E3 (Lead (Pb)-free)

Notes:

a. Based on TC = 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under Steady State conditions is 166 °C/W.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

- 12

V

Gate-Source Voltage

VGS

± 8

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

- 7.1

A

TC = 70 °C

- 5.7

TA = 25 °C

- 5.1b, c

TA = 70 °C

- 4.0b, c

Pulsed Drain Current

IDM

- 20

Continuous Source-Drain Diode Current

TC = 25 °C

IS

- 1.0

TA = 25 °C

- 0.63b, c

Maximum Power Dissipation

TC = 25 °C

PD

2.5

W

TC = 70 °C

1.6

TA = 25 °C

1.25b, c

TA = 70 °C

0.8b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, d

≤ 5 s

RthJA

75

100

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

40

50

RoHS

COMPLIANT

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