Motore di ricerca datesheet componenti elettronici |
|
SI2323DS-T1-E3 Scheda tecnica(PDF) 4 Page - Vishay Siliconix |
|
SI2323DS-T1-E3 Scheda tecnica(HTML) 4 Page - Vishay Siliconix |
4 / 6 page www.vishay.com 4 Document Number: 72024 S-81954-Rev. C, 25-Aug-08 Vishay Siliconix Si2323DS TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 1.0 1.2 0.1 10 20 0.0 0.2 0.4 0.6 0.8 TJ = 150 °C VSD - Source-to-Drain Voltage (V) 1 TJ = 25 °C - 0.2 - 0.1 0.0 0.1 0.2 0.3 0.4 - 50 - 25 0 25 50 75 100 125 150 ID = 140 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.00 0.03 0.06 0.09 0.12 0.15 012345 ID = 4.7 A VGS - Gate-to-Source Voltage (V) ID = 2 A 0.01 0 1 6 12 2 4 10 600 0.1 Time (s) 8 10 100 TA = 25 °C Safe Operating Area 100 1 0.1 1 10 100 0.01 10 TA = 25 °C Single Pulse P(t) = 10 DC 0.1 ID(on) Limited RDS(on)* Limited by BVDSS Limited P(t) = 1 P(t) = 0.1 P(t) = 0.01 P(t) = 0.001 P(t) = 0.0001 IDM Limited VDS - Drain-to-Source Voltage (V) *VGS > minimum VGS at which RDS(on) is specified |
Codice articolo simile - SI2323DS-T1-E3 |
|
Descrizione simile - SI2323DS-T1-E3 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEETIT.COM |
Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |