SI1926DL-T1-E3 datasheet(5/7 Pages) VISHAY

Il numero della parte	SI1926DL-T1-E3

Spiegazioni elettronici	Dual N-Channel 60-V (D-S) MOSFET

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Produttore elettronici	VISHAY [Vishay Siliconix]

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Document Number: 73684

S-72193-Rev. B, 22-Oct-07

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Si1926DL

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TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

0.0

0.1

0.2

0.3

0.4

0.5

0

25

50

75

100

125

150

TC - Case Temperature (°C)

Power Derating

0.0

0.1

0.2

0.3

0.4

0.5

0

25

50

75

100

125

150

TC - Case Temperature (°C)

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