SI1405BDH-T1-E3 datasheet(5/6 Pages) VISHAY

Il numero della parte	SI1405BDH-T1-E3

Spiegazioni elettronici	P-Channel 1.8-V (G-S) MOSFET

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Produttore elettronici	VISHAY [Vishay Siliconix]

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Document Number: 74634

S-71945-Rev. A, 10-Sep-07

www.vishay.com

5

Vishay Siliconix

Si1405BDH

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see http://www.vishay.com/ppg?74634.

Current Derating*

0

1

2

3

4

5

0

25

50

75

100

125

150

TC - Case Temperature (°C)

Package Limited

Power Derating

0.0

0.6

1.2

1.8

2.4

3.0

0

25

50

75

100

125

150

TC - Case Temperature (°C)

Normalized Thermal Transient Impedance, Junction-to-Ambient

10-3

10-2

0

6

0

1

10-1

10-4

100

2

1

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Square Wave Pulse Duration (s)

1. Duty Cycle, D =

2. Per Unit Base = RthJA =100 °C/W

3. TJM - TA = PDMZthJA(t)

t1

t2

t1

t2

Notes:

4. Surface Mounted

PDM

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