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SI1330EDL-T1 Scheda tecnica(PDF) 3 Page - Vishay Siliconix |
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SI1330EDL-T1 Scheda tecnica(HTML) 3 Page - Vishay Siliconix |
3 / 5 page Si1330EDL Vishay Siliconix New Product Document Number: 72861 S-40853—Rev. A, 03-May-04 www.vishay.com 3 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.0 0.4 0.8 1.2 1.6 2.0 −50 −25 0 25 50 75 100 125 150 On-Resistance vs. Junction Temperature TJ − Junction Temperature (_C) VGS = 10 V @ 250 mA VGS = 4.5 V @ 200 mA 0 1 2 3 4 5 6 7 0.0 0.1 0.2 0.3 0.4 0.5 0.6 VDS = 10 V ID = 250 mA Gate Charge Qg − Total Gate Charge (nC) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.2 0.4 0.6 0.8 1.0 On-Resistance vs. Drain Current ID − Drain Current (mA) VGS = 4.5 V VGS = 10 V 0 1 2 3 4 5 02468 10 On-Resistance vs. Gate-Source Voltage VGS − Gate-to-Source Voltage (V) ID = 200 mA 1.2 1.5 1 100 1000 0.00 0.3 0.6 0.9 TJ = 25_C TJ = 125_C Source-Drain Diode Forward Voltage VSD − Source-to-Drain Voltage (V) 10 TJ = −55_C VGS = 0 V −0.8 −0.6 −0.4 −0.2 −0.0 0.2 0.4 −50 −25 0 25 50 75 100 125 150 ID = 250 mA Threshold Voltage Variance over Temperature TJ − Temperature (_C) |
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