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SI1071X-T1-GE3 Scheda tecnica(PDF) 3 Page - Vishay Siliconix |
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SI1071X-T1-GE3 Scheda tecnica(HTML) 3 Page - Vishay Siliconix |
3 / 6 page Document Number: 74321 S-80641-Rev. B, 24-Mar-08 www.vishay.com 3 Vishay Siliconix Si1071X New Product TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge 0 2 4 6 8 0.0 0.6 1.2 1.8 2.4 3.0 VDS - Drain-to-Source Voltage (V) VGS = 10 V thru 4 V VGS = 3 V VGS = 2 V VGS = 1 V 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0 3 6 9 12 15 ID - Drain Current (A) VGS = 4.5 V VGS = 10 V VGS = 2.5 V 0 2 4 6 8 10 0 246 8 10 Qg - Total Gate Charge (nC) ID = 0.96 A VDS = 15 V VDS = 24 V Transfer Characteristics Curves vs. Temp. Capacitance On-Resistance vs. Junction Temperature 0.0 0.4 0.8 1.2 1.6 2.0 0.0 0.5 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) TC = - 55 °C TC = 125 °C TC = 25 °C 0 100 200 300 400 500 600 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) Coss Ciss Crss 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 VGS = 10 V, ID = 0.96 A TJ - Junction Temperature (°C) VGS = 2.5 V ID = 0.79 A VGS = 4.5 V, ID = 0.91 A |
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