SI1051X-T1-GE3 datasheet(4/6 Pages) VISHAY

Il numero della parte	SI1051X-T1-GE3

Spiegazioni elettronici	P-Channel 8-V (D-S) MOSFET

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Document Number: 74479

S-80641-Rev. B, 24-Mar-08

Vishay Siliconix

Si1051X

New Product

TYPICAL CHARACTERISTICS

TA = 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.0

0.2

0.4

0.6

0.8

1.0

1.2

TJ = 150 °C

VSD - Source-to-Drain Voltage (V)

0.01

0.1

1

10

TJ = 25 °C

TJ - Temperature (°C)

0.2

0.3

0.4

0.5

0.6

0.7

0.8

- 50

- 25

0

25

50

75

100

125

150

ID = 250 µA

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power

VGS - Gate-to-Source Voltage (V)

0.00

0.05

0.10

0.15

0.20

012345

ID = 1.2 A

TA = 25 °C

TA = 125 °C

Time (s)

0.01

0.1

1

10

100

1000

0

1

2

3

4

5

Safe Operating Area, Junction-to-Ambient

1

0.1

1

10

0.01

10

0.1

TA = 25 °C

Single Pulse

10 ms

100 ms

DC

1 s

10 s

VDS - Drain-to-Source Voltage (V)

* VGS

minimum VGS at which RDS(on) is specified

Limited

by RDS(on)*

0.001

1 ms

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