SI1016X-T1-GE3 datasheet(7/8 Pages) VISHAY

Il numero della parte	SI1016X-T1-GE3

Spiegazioni elettronici	Complementary N- and P-Channel 20-V (D-S) MOSFET

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Document Number: 71168

S-80427-Rev. D, 03-Mar-08

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Si1016X

N- OR P-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see http://www.vishay.com/ppg?71168.

Normalized Thermal Transient Impedance, Junction-to-Ambient

10-3

10-2

1

10

600

10-1

10-4

100

2

1

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Square Wave Pulse Duration (s)

1. Duty Cycle, D =

2. Per Unit Base = R thJA = 500 °C/W

3. TJM - TA = PDMZthJA(t)

t1

t2

t1

t2

Notes:

4. Surface Mounted

PDM

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