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IRFPC60LC Scheda tecnica(PDF) 1 Page - Vishay Siliconix

Il numero della parte IRFPC60LC
Spiegazioni elettronici  Power MOSFET
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Produttore elettronici  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

IRFPC60LC Scheda tecnica(HTML) 1 Page - Vishay Siliconix

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Document Number: 91244
www.vishay.com
S-Pending-Rev. A, 16-Jun-08
WORK-IN-PROGRESS
1
Power MOSFET
IRFPC60LC, SiHFPC60LC
Vishay Siliconix
FEATURES
• Ultra Low Gate Charge
• Reduced Gate Drive Requirement
• Enhanced 30 V VGS Rating
• Reduced Ciss, Coss, Crss
• Isolated Central Mounting Hole
• Dynamic dV/dt Rated
• Repetitive Avalanche Rated
• Lead (Pb)-free Available
DESCRIPTION
This new series of low charge Power MOSFETs achieve
significantly lower gate charge over conventional MOSFETs.
Utilizing advanced Power MOSFETs technology the device
improvements allow for reduced gate drive requirements,
faster switching speeds and increased total system savings.
These device improvements combined with the proven
ruggedness and reliability of Power MOSFETs offer the
designer a new standart in power transistors for switching
applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mounting
hole.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 7.2 µH, RG = 25 Ω, IAS = 16 A (see fig. 12).
c. ISD ≤ 16 A, dI/dt ≤ 140 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
PRODUCT SUMMARY
VDS (V)
600
RDS(on) (Ω)VGS = 10 V
0.40
Qg (Max.) (nC)
120
Qgs (nC)
29
Qgd (nC)
48
Configuration
Single
N-Channel MOSFET
G
D
S
TO-247
G
D
S
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package
TO-247
Lead (Pb)-free
IRFPC60LCPbF
SiHFPC60LC-E3
SnPb
IRFPC60LC
SiHFPC60LC
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
600
V
Gate-Source Voltage
VGS
± 30
Continuous Drain Current
VGS at 10 V
TC = 25 °C
ID
16
A
TC = 100 °C
10
Pulsed Drain Currenta
IDM
64
Linear Derating Factor
2.2
W/°C
Single Pulse Avalanche Energyb
EAS
1000
mJ
Repetitive Avalanche Currenta
IAR
16
A
Repetitive Avalanche Energya
EAR
28
mJ
Maximum Power Dissipation
TC = 25 °C
PD
280
W
Peak Diode Recovery dV/dtc
dV/dt
3.0
V/ns
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature)
for 10 s
300d
Mounting Torque
6-32 or M3 screw
10
lbf · in
1.1
N · m
* Pb containing terminations are not RoHS compliant, exemptions may apply


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