Document Number: 91213

www.vishay.com

S-Pending-Rev. A, 24-Jun-08

WORK-IN-PROGRESS

1

Power MOSFET

IRFP254N, SiHFP254N

Vishay Siliconix

FEATURES

• Advanced Process Technology

• Dynamic dV/dt Rating

• 175 °C Operating Temperature

• Fully Avalanche Rated

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available

DESCRIPTION

Fifth generation Power MOSFETs from Vishay utilize

advanced processing techniques to achieve extremely low

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

these Power MOSFETs are well known for, provides the

designer with an extremely efficient and reliable device for

use in a wide variety of applications.

The TO-247 package is preferred for commercial-industrial

applications where higher power levels preclude the use of

TO-220 devices. The TO-247 is similar but superior to the

earlier TO-218 package because of its isolated mounting

hole.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

PRODUCT SUMMARY

250

0.125

100

17

44

Configuration

Single

N-Channel MOSFET

G

D

S

TO-247

G

D

S

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package

TO-247

Lead (Pb)-free

IRFP254NPbF

SiHFP254N-E3

SnPb

IRFP254N

SiHFP254N

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

250

V

Gate-Source Voltage

± 20

Continuous Drain Current

23

A

16

92

Linear Derating Factor

1.5

W/°C

300

mJ

14

A

22

mJ

Maximum Power Dissipation

220

W

dV/dt

7.4

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 175

°C

Soldering Recommendations (Peak Temperature)

for 10 s

Mounting Torque

6-32 or M3 screw

10

lbf · in

1.1

N · m

* Pb containing terminations are not RoHS compliant, exemptions may apply