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IRFP26N60L Scheda tecnica(PDF) 3 Page - Vishay Siliconix |
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IRFP26N60L Scheda tecnica(HTML) 3 Page - Vishay Siliconix |
3 / 8 page Document Number: 91218 www.vishay.com S-81264-Rev. B, 21-Jul-08 3 IRFP26N60L, SiHFP26N60L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 - Typical Output Characteristics Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature VDS, Drain-to-Source Voltage (V) 0.1 1 10 100 0.01 0.1 10 100 1000 1 VGS 15 V 12 V 10 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Top Bottom 5.5 V 20 μs PULSE WIDTH TJ = 25 °C 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) 0.1 1 10 100 VGS 15 V 12 V 10 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom Top 5.5 V 20 μs PULSE WIDTH TJ = 150 °C 4.0 2.0 8.0 6.0 10.0 12.0 14.0 0.10 1.00 10.00 100.00 VGS, Gate-to-Source Voltage (V) VDS = 50 V 20 μs PULSE WIDTH TJ = 150 °C TJ = 25 °C 1000.00 16.0 ID = 26 A VGS = 10 V TJ, Junction Temperature - 60 - 20 - 40 0 20 40 60 80 100 120 140 160 0.5 1.0 1.5 2.0 2.5 3.0 |
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