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IRFBF20STRLPBF Scheda tecnica(PDF) 2 Page - Vishay Siliconix |
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IRFBF20STRLPBF Scheda tecnica(HTML) 2 Page - Vishay Siliconix |
2 / 8 page www.vishay.com Document Number: 91121 2 S-Pending-Rev. A, 23-Jun-08 IRFBF20S, IRFBF20L, SiHFBF20S, SiHFBF20L Vishay Siliconix Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V; starting TJ = 25 °C, L = 117 mH, RG = 25 Ω, IAS = 1.7 A (see fig. 12). c. ISD ≤ 1.7 A, dI/dt ≤ 70 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. e. Uses IRFBF20/SiHFBF20 data and test conditions. Note a. When mounted on 1" square PCB ( FR-4 or G-10 material). Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d Mounting Torque 6-32 or M3 screw 10 N ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient (PCB Mounted, steady-state)a RthJA -40 °C/W Maximum Junction-to-Case RthJC -2.3 SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 900 - - V VDS Temperature Coefficient ΔV DS/TJ Reference to 25 °C, ID = 1 mA - 1.1 - mV/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 900 V, VGS = 0 V - - 100 µA VDS = 720 V, VGS = 0 V, TJ = 125 °C - - 500 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 1.0 Ab -- 8.0 Ω Forward Transconductance gfs VDS = 50 V, ID = 1.0 Ab 0.6 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 490 - pF Output Capacitance Coss -55 - Reverse Transfer Capacitance Crss -18 - Total Gate Charge Qg VGS = 10 V ID = 1.7 A, VDS = 360 V, see fig. 6 and 13b -- 38 nC Gate-Source Charge Qgs -- 4.7 Gate-Drain Charge Qgd -- 21 Turn-On Delay Time td(on) VDD = 450 V, ID = 1.7 A, RG = 18 Ω, VGS = 10 V, see fig. 10b -8.0 - ns Rise Time tr -21 - Turn-Off Delay Time td(off) -56 - Fall Time tf -32 - |
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