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IRFBC20STRLPBF Scheda tecnica(PDF) 2 Page - Vishay Siliconix |
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IRFBC20STRLPBF Scheda tecnica(HTML) 2 Page - Vishay Siliconix |
2 / 8 page www.vishay.com Document Number: 91107 2 S-Pending-Rev. A, 03-Jun-08 IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L Vishay Siliconix Note a. When mounted on 1" square PCB (FR-4 or G-10 material). Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. c. Uses IRFBC20/SiHFBC20 data and test conditions. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient (PCB Mounted, steady-state)a RthJA -40 °C/W Maximum Junction-to-Case (Drain) RthJC -2.5 SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 600 - - V VDS Temperature Coefficient ΔV DS/TJ Reference to 25 °C, ID = 1 mAc -0.88 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 600 V, VGS = 0 V - - 100 µA VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 500 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 1.3 Ab -- 4.4 Ω Forward Transconductance gfs VDS = 50 V, ID = 1.3 Ac 1.4 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5c - 350 - pF Output Capacitance Coss -48 - Reverse Transfer Capacitance Crss -8.6 - Total Gate Charge Qg VGS = 10 V ID = 2.0 A, VDS = 360 V, see fig. 6 and 13b, c -- 18 nC Gate-Source Charge Qgs -- 3.0 Gate-Drain Charge Qgd -- 8.9 Turn-On Delay Time td(on) VDD = 300 V, ID = 2.0 A, RG = 18 Ω, RD = 150 Ω, see fig. 10b, c -10 - ns Rise Time tr -23 - Turn-Off Delay Time td(off) -30 - Fall Time tf -25 - Internal Source Inductance LS Between lead, and center of die contact - 7.5 - nH Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 2.2 A Pulsed Diode Forward Currenta ISM -- 8.0 Body Diode Voltage VSD TJ = 25 °C, IS = 2.2 A, VGS = 0 Vb -- 1.6 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 2.0 A, dI/dt = 100 A/µsb, c - 290 580 ns Body Diode Reverse Recovery Charge Qrr - 0.67 1.3 µC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) S D G |
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