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IRFB16N60LPBF Scheda tecnica(PDF) 1 Page - Vishay Siliconix |
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IRFB16N60LPBF Scheda tecnica(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 91097 www.vishay.com S-Pending-Rev. A, 03-Jun-08 WORK-IN-PROGRESS 1 Power MOSFET IRFB16N60L, SiHFB16N60L Vishay Siliconix FEATURES • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications • Lower Gate Charge Results in Simpler Drive Requirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise Immunity • Lead (Pb)-free Available APPLICATIONS • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control Applications Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 2.5 mH, RG = 25 Ω, IAS =16 A, dV/dt = 10 V/ns (see fig. 12a). c. ISD ≤ 16 A, dI/dt ≤ 340 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. PRODUCT SUMMARY VDS (V) 600 RDS(on) (Ω)VGS = 10 V 0.385 Qg (Max.) (nC) 100 Qgs (nC) 30 Qgd (nC) 46 Configuration Single N-Channel MOSFET G D S TO-220 G D S Available RoHS* COMPLIANT ORDERING INFORMATION Package TO-220 Lead (Pb)-free IRFB16N60LPbF SiHFB16N60L-E3 SnPb IRFB16N60L SiHFB16N60L ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ± 30 Continuous Drain Current VGS at 10 V TC = 25 °C ID 16 A TC = 100 °C 10 Pulsed Drain Currenta IDM 60 Linear Derating Factor 2.5 W/°C Single Pulse Avalanche Energyb EAS 310 mJ Avalanche Currenta IAR 16 A Repetitive Avalanche Energya EAR 31 mJ Maximum Power Dissipation TC = 25 °C PD 310 W Peak Diode Recovery dV/dtc dV/dt 10 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d Mounting Torque 6-32 or M3 screw 10 lbf · in 1.1 N · m * Pb containing terminations are not RoHS compliant, exemptions may apply |
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