Document Number: 91068

www.vishay.com

S-Pending-Rev. A, 02-Jun-08

WORK-IN-PROGRESS

1

Power MOSFET

IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL

Vishay Siliconix

FEATURES

• Ultra Low Gate Charge

• Reduced Gate Drive Requirement

• Extremely High Frequency Operation

• Repetitive Avalanche Rated

• Lead (Pb)-free Available

DESCRIPTION

This new series of low charge Power MOSFETs achieve

significantly lower gate charge then conventional Power

MOSFETs. Utilizing the new LCDMOS (low charge device

Power MOSFETs) technology, the device improvements are

achieved without added product cost, allowing for reduced

gate drive requirements and total system savings. In

addition, reduced switching losses and improved efficiency

are achievable in a variety of high frequency applications.

Frequencies of a few MHz at high current are possible using

the new low charge Power MOSFETs.

These device improvements combined with the proven

ruggedness

and

reliability

that

characterize

Power

MOSFETs offer the designer a new power transistor

standard for switching applications.

Note

a. See device orientation.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

e. Uses IRF840LC/SiHF840LC data and test conditions.

PRODUCT SUMMARY

500

0.85

39

10

19

Configuration

Single

N-Channel MOSFET

G

D

S

G

D

S

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package

Lead (Pb)-free

IRF840LCSPbF

-

IRF840LCLPbF

SiHF840LCS-E3

-

SiHF840LCL-E3

SnPb

IRF840LCS

IRF840LCL

SiHF840LCS

SiHF840LCL

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

500

V

Gate-Source Voltage

± 30

Continuous Drain Current

8.0

A

5.1

28

Linear Derating Factor

1.0

W/°C

510

mJ

8.0

A

13

mJ

Maximum Power Dissipation

3.1

W

125

dV/dt

3.5

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

* Pb containing terminations are not RoHS compliant, exemptions may apply