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IRF740APBF Scheda tecnica(PDF) 1 Page - Vishay Siliconix |
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IRF740APBF Scheda tecnica(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 91051 www.vishay.com S-81291-Rev. A, 16-Jun-08 1 Power MOSFET IRF740A, SiHF740A Vishay Siliconix FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply • High Speed Power Switching TYPICAL SMPS TOPOLOGIES • Single Transistor Flyback Xfmr. Reset • Single Transistor Forward Xfmr. Reset (Both for US Line Input Only) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 12.6 mH, RG = 25 Ω IAS = 10 A (see fig. 12). c. ISD ≤ 10 A, dV/dt ≤ 330 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. PRODUCT SUMMARY VDS (V) 400 RDS(on) (Ω)VGS = 10 V 0.55 Qg (Max.) (nC) 36 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single N-Channel MOSFET G D S TO-220 G D S Available RoHS* COMPLIANT ORDERING INFORMATION Package TO-220 Lead (Pb)-free IRF740APbF SiHF740A-E3 SnPb IRF740A SiHF740A ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Gate-Source Voltage VGS ± 30 V Continuous Drain Current VGS at 10 V TC = 25 °C ID 10 A TC = 100 °C 6.3 Pulsed Drain Currenta IDM 40 Linear Derating Factor 1.0 W/°C Single Pulse Avalanche Energyb EAS 630 mJ Repetitive Avalanche Currenta IAR 10 A Repetitive Avalanche Energya EAR 12.5 mJ Maximum Power Dissipation TC = 25 °C PD 125 W Peak Diode Recovery dV/dtc dV/dt 5.9 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d Mounting Torque 6-32 or M3 screw 10 lbf · in 1.1 N · m * Pb containing terminations are not RoHS compliant, exemptions may apply |
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