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IRF9Z34L Scheda tecnica(PDF) 1 Page - Vishay Siliconix |
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IRF9Z34L Scheda tecnica(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 91093 www.vishay.com S-Pending-Rev. A, 03-Jun-08 WORK-IN-PROGRESS 1 Power MOSFET IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L Vishay Siliconix FEATURES • Advanced Process Technology • Surface Mount (IRF9Z34S/SiHF9Z34S) • Low-Profile Through-Hole (IRSiHF9Z34L/SiHF9Z34L) • 175 °C Operating Temperature • Fast Switching • P-Channel • Fully Avalanche Rated • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRSiHF9Z34L/SiHF9Z34L) is available for low-profile applications. Note a. See device orientation. PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω)VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single S G D P-Channel MOSFET D2PAK (TO-263) G D S I2PAK (TO-262) Available RoHS* COMPLIANT ORDERING INFORMATION Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262) Lead (Pb)-free IRF9Z34SPbF IRF9Z34STRLPbFa IRF9Z34STRRPbFa IRF9Z34LPbF SiHF9Z34S-E3 SiHF9Z34STL-E3a SiHF9Z34STR-E3a SiHF9Z34L-E3 SnPb IRF9Z34S IRF9Z34STRLa IRF9Z34STRRa IRF9Z34L SiHF9Z34S SiHF9Z34STLa SiHF9Z34STRa SiHF9Z34L ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS - 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at - 10 V TC = 25 °C ID - 18 A TC = 100 °C - 13 Pulsed Drain Currenta, e IDM - 72 Linear Derating Factor 0.59 W/°C Single Pulse Avalanche Energyb, e EAS 370 mJ Avalanche Currenta IAR - 18 A Repetiitive Avalanche Energya EAR 8.8 mJ * Pb containing terminations are not RoHS compliant, exemptions may apply |
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