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IRF9Z24STRLPBF Scheda tecnica(PDF) 3 Page - Vishay Siliconix |
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IRF9Z24STRLPBF Scheda tecnica(HTML) 3 Page - Vishay Siliconix |
3 / 8 page Document Number: 91091 www.vishay.com S-Pending-Rev. A, 03-Jun-08 3 IRF9Z24S, IRF9Z24L, SiHF9Z24S, SiHF9Z24L Vishay Siliconix Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. c. Uses IRF9Z24/SiHF9Z24 data and test conditions. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 - Typical Output Characteristics Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature Drain-Source Body Diode Characteristics Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = -11 A, dI/dt = 100 A/µsb, c - 100 200 ns Body Diode Reverse Recovery Charge Qrr - 320 640 nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT |
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