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TDA1908 Scheda tecnica(PDF) 3 Page - STMicroelectronics |
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TDA1908 Scheda tecnica(HTML) 3 Page - STMicroelectronics |
3 / 12 page Symbol Parameter Test conditions Min. Typ. Max. Unit Vs Supply voltage 4 30 V Vo Quiescent output voltage Vs =4V Vs = 18V Vs = 30V 1.6 8.2 14.4 2.1 9.2 15.5 2.5 10.2 16.8 V Id Quiescent drain current Vs =4V Vs = 18V Vs = 30V 15 17.5 21 35 mA VCEsat Output stage saturation voltage (each output transistor) IC =1A IC = 2.5A 0.5 1.3 V Po Output power d = 10% f = 1KHz Vs =9V RL =4 Ω Vs = 14V RL =4 Ω Vs = 18V RL =4 Ω Vs = 22V RL =8 Ω Vs = 24V RL =16 Ω 7 6.5 4.5 2.5 5.5 9 8 5.3 W ELECTRICAL CHARACTERISTICS (Refer to the test circuit, Tamb =25 °C, Rth (heatsink)= 8 °C/W, unless otherwise specified) ( °) Obtained with tabs soltered to printed circuit board with min copper area. Symbol Parameter Value Unit Rth j-tab Thermal resistance junction-tab max 12 °C/W Rth j-amb Thermal resistance junction-ambient max ( °)70 °C/W THERMAL DATA TEST CIRCUIT * See fig. 12 3/12 TDA1908 |
Codice articolo simile - TDA1908 |
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