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STP11NM60ND Scheda tecnica(PDF) 5 Page - STMicroelectronics |
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STP11NM60ND Scheda tecnica(HTML) 5 Page - STMicroelectronics |
5 / 18 page STP11NM60ND - STF/I11NM60ND - STU11NM60ND - STD11NM60ND Electrical characteristics 5/18 Table 7. Switching times Symbol Parameter Test conditions Min Typ Max Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 300 V, ID = 5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 18) 16 7 50 9 ns ns ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min Typ Max Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) 10 40 A A VSD (2) 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward on voltage ISD = 10 A, VGS=0 1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD =10 A, di/dt =100 A/µs, VDD = 100 V (see Figure 20) 130 0.69 11 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current VDD = 100 V di/dt =100 A/µs, ISD = 10 A Tj = 150 °C (see Figure 20) 200 1.2 12 ns µC A |
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