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1N4150-TAP Scheda tecnica(PDF) 1 Page - Vishay Siliconix

Il numero della parte 1N4150-TAP
Spiegazioni elettronici  Small Signal Fast Switching Diodes
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Produttore elettronici  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

1N4150-TAP Scheda tecnica(HTML) 1 Page - Vishay Siliconix

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1N4150
Document Number 85522
Rev. 1.7, 16-Feb-07
Vishay Semiconductors
www.vishay.com
1
94 9367
Small Signal Fast Switching Diodes
Features
• Silicon Epitaxial Planar Diode
• Low forward voltage drop
• High forward current capability
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
• High speed switch and general purpose use in
computer and industrial applications
Mechanical Data
Case: DO35 Glass case
Weight: approx. 125 mg
Cathode Band Color: black
Packaging Codes/Options:
TR/10 k per 13" reel (52 mm tape), 50 k/box
TAP/10 k per Ammopack (52 mm tape), 50 k/box
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Part
Ordering code
Type Marking
Remarks
1N4150
1N4150-TR or 1N4150-TAP
1N4150
Tape and Reel/Ammopack
Parameter
Test condition
Symbol
Value
Unit
Repetitive peak reverse voltage
VRRM
50
V
Reverse voltage
VR
50
V
Peak forward surge current
tp = 1 µs
IFSM
4A
Average peak forward current
IFRM
600
mA
Forward continuous current
IF
300
mA
Average forward current
VR = 0
IFAV
150
mA
Power dissipation
l = 4 mm, TL = 45 °C
Ptot
440
mW
l = 4 mm, TL ≤ 25 °C
Ptot
500
mW
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to ambient air l = 4 mm, TL = constant
RthJA
350
K/W
Junction temperature
Tj
175
°C
Storage temperature range
Tstg
- 65 to + 175
°C
e2


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