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2SJ387 Scheda tecnica(PDF) 4 Page - Renesas Technology Corp

Il numero della parte 2SJ387
Spiegazioni elettronici  Silicon P Channel MOS FET
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Produttore elettronici  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SJ387 Scheda tecnica(HTML) 4 Page - Renesas Technology Corp

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2SJ387(L), 2SJ387(S)
Rev.2.00 Sep 07, 2005 page 4 of 7
0.20
–40
0
40
80
120
160
Case Temperature
Tc (°C)
0
0.04
0.08
0.12
0.16
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
ID = –5 A
ID = –10 A
Forward Transfer Admittance vs.
Drain Current
Drain Current ID (A)
50
20
5
10
1
2
0.5
–0.1
–0.2
–0.5
–1
–5
–2
–10
Tc = –25°C
75°C
VDS = –10 V
Pulse Test
25°C
Reverse Drain Current
IDR (A)
Body-Drain Diode Reverse
Recovery Time
–0.1 –0.3
–1
–3
–10
–30
–100
1000
500
200
50
100
20
10
di / dt = 20 A /
µs
VGS = 0, Ta = 25°C
0
–10
–20
–30
–40
–50
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
10000
5000
2000
1000
500
200
100
Ciss
Coss
Crss
VGS = 0
f = 1 MHz
0
0
Gate Charge
Qg (nc)
0
–20
–16
–12
–8
–4
–50
–40
–30
–20
–10
Dynamic Input Characteristics
20
40
60
80
100
VDS
VGS
1000
500
200
50
100
20
10
–0.3
–3
–1
–10
–30 –100
–0.1
tf
tr
td(off)
td(on)
Drain Current
ID (A)
Switching Characteristics
VDD = –5 V
–10 V
–15 V
VDD = –5 V
–10 V
–15 V
–4 V
VGS = –2.5 V
–1 A, –2 A
–1 A
–2 A
–5 A
VGS = –4 V, VDD = –10 V
PW = 5
µs, duty ≤ 1 %


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