Motore di ricerca datesheet componenti elettronici |
|
2SJ387 Scheda tecnica(PDF) 4 Page - Renesas Technology Corp |
|
2SJ387 Scheda tecnica(HTML) 4 Page - Renesas Technology Corp |
4 / 8 page 2SJ387(L), 2SJ387(S) Rev.2.00 Sep 07, 2005 page 4 of 7 0.20 –40 0 40 80 120 160 Case Temperature Tc (°C) 0 0.04 0.08 0.12 0.16 Static Drain to Source on State Resistance vs. Temperature Pulse Test ID = –5 A ID = –10 A Forward Transfer Admittance vs. Drain Current Drain Current ID (A) 50 20 5 10 1 2 0.5 –0.1 –0.2 –0.5 –1 –5 –2 –10 Tc = –25°C 75°C VDS = –10 V Pulse Test 25°C Reverse Drain Current IDR (A) Body-Drain Diode Reverse Recovery Time –0.1 –0.3 –1 –3 –10 –30 –100 1000 500 200 50 100 20 10 di / dt = 20 A / µs VGS = 0, Ta = 25°C 0 –10 –20 –30 –40 –50 Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage 10000 5000 2000 1000 500 200 100 Ciss Coss Crss VGS = 0 f = 1 MHz 0 0 Gate Charge Qg (nc) 0 –20 –16 –12 –8 –4 –50 –40 –30 –20 –10 Dynamic Input Characteristics 20 40 60 80 100 VDS VGS 1000 500 200 50 100 20 10 –0.3 –3 –1 –10 –30 –100 –0.1 tf tr td(off) td(on) Drain Current ID (A) Switching Characteristics VDD = –5 V –10 V –15 V VDD = –5 V –10 V –15 V –4 V VGS = –2.5 V –1 A, –2 A –1 A –2 A –5 A VGS = –4 V, VDD = –10 V PW = 5 µs, duty ≤ 1 % |
Codice articolo simile - 2SJ387 |
|
Descrizione simile - 2SJ387 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEETIT.COM |
Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |