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2SJ319STL-E Scheda tecnica(PDF) 3 Page - Renesas Technology Corp

Il numero della parte 2SJ319STL-E
Spiegazioni elettronici  Silicon P Channel MOS FET
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Produttore elettronici  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SJ319STL-E Scheda tecnica(HTML) 3 Page - Renesas Technology Corp

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2SJ319(L), 2SJ319(S)
Rev.2.00 Sep 07, 2005 page 3 of 7
Main Characteristics
Case Temperature
Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
Gate to Source Voltage
VGS (V)
Typical Transfer Characteristics
–5
0
–1
–2
–3
–4
0
–4
–8
–12
–16
–20
–5
0
–1
–2
–3
–4
0
–2–4–6–8
–10
Tc = –25°C
20
0
05
10
15
0
50
100
150
200
VDS = –10 V
Pulse Test
–10 V
–5 V
–8 V
–6 V
–4 V
VGS = –3.5 V
Pulse Test
Drain to Source Voltage
VDS (V)
Maximum Safe Operation Area
–30
–10
–3
–1
–0.05
–0.1
–0.3
–1
–3
–10
–30
–100 –300 –500
–50
Ta = 25°C
PW
= 10
ms
(1
shot)
DC
Operation
(Tc
=
25°C)
1 ms
10
µs
100
µs
Operation in
this area is
limited by RDS (on)
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–20
0
–4
–8
–12
–16
0
–4
–8
–12
–16
–20
Pulse Test
ID = –5 A
–1 A
–2 A
Drain Current
ID (A)
Static Drain to Source on State Resistance
vs. Drain Current
2
1
0.2
0.5
0.1
–0.5
–2
–0.2
–1
–5
–10
10
5
VGS = –10 V
Pulse Test
25°C
75°C


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