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2SJ319STL-E Scheda tecnica(PDF) 3 Page - Renesas Technology Corp |
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2SJ319STL-E Scheda tecnica(HTML) 3 Page - Renesas Technology Corp |
3 / 8 page 2SJ319(L), 2SJ319(S) Rev.2.00 Sep 07, 2005 page 3 of 7 Main Characteristics Case Temperature Tc (°C) Power vs. Temperature Derating Drain to Source Voltage VDS (V) Typical Output Characteristics Gate to Source Voltage VGS (V) Typical Transfer Characteristics –5 0 –1 –2 –3 –4 0 –4 –8 –12 –16 –20 –5 0 –1 –2 –3 –4 0 –2–4–6–8 –10 Tc = –25°C 20 0 05 10 15 0 50 100 150 200 VDS = –10 V Pulse Test –10 V –5 V –8 V –6 V –4 V VGS = –3.5 V Pulse Test Drain to Source Voltage VDS (V) Maximum Safe Operation Area –30 –10 –3 –1 –0.05 –0.1 –0.3 –1 –3 –10 –30 –100 –300 –500 –50 Ta = 25°C PW = 10 ms (1 shot) DC Operation (Tc = 25°C) 1 ms 10 µs 100 µs Operation in this area is limited by RDS (on) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage –20 0 –4 –8 –12 –16 0 –4 –8 –12 –16 –20 Pulse Test ID = –5 A –1 A –2 A Drain Current ID (A) Static Drain to Source on State Resistance vs. Drain Current 2 1 0.2 0.5 0.1 –0.5 –2 –0.2 –1 –5 –10 10 5 VGS = –10 V Pulse Test 25°C 75°C |
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