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2SJ317NYTR-E Scheda tecnica(PDF) 2 Page - Renesas Technology Corp

Il numero della parte 2SJ317NYTR-E
Spiegazioni elettronici  Silicon P Channel MOS FET
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Produttore elettronici  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SJ317NYTR-E Scheda tecnica(HTML) 2 Page - Renesas Technology Corp

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2SJ317
Rev.2.00 Sep 07, 2005 page 2 of 6
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Drain to source voltage
VDSS
–12
V
Gate to source voltage
VGSS
–7
V
Drain current
ID
±2
A
Drain peak current
ID (pulse)
Note 1
±4
A
Body to drain diode reverse drain current
IDR
2
A
Channel dissipation
Pch
Note 2
1
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 100 µs, duty cycle ≤ 10%
2. Value on the alumina ceramic board (12.5
× 20 × 0.7 mm)
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V (BR) DSS
–12
V
ID = –1 mA, VGS = 0
Gate to source breakdown voltage
V (BR) GSS
±7
V
IG =
±10 µA, VDS = 0
Gate to source leak current
IGSS
±5
µA
VGS =
±6.5 V, VDS = 0
Zero gate voltage drain current
IDSS
–1
µA
VDS = –8 V, VGS = 0
Gate to source cutoff voltage
VGS (off)
–0.4
–1.4
V
ID = –100
µA, VDS = –5 V
RDS (on) 1
0.4
0.7
ID = –0.5 A, VGS = –2.2 V
Note 3
Static drain to source on state resistance
RDS (on) 2
0.28
0.35
ID = –1 A, VGS = –4 V
Note 3
Forward transfer admittance
|yfs|
1.0
2.3
S
ID = –1 A, VDS = –5 V
Note 3
Input capacitance
Ciss
63
pF
Output capacitance
Coss
180
pF
Reverse transfer capacitance
Crss
23
pF
VDS = –5 V
VGS = 0
f = 1 MHz
Turn-on delay time
td (on)
500
ns
Turn-off delay time
td (off)
2860
ns
ID = –0.2 A
Vin = –4 V, RL = 51
Note:
3. Pulse test


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