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2SJ221-E Scheda tecnica(PDF) 5 Page - Renesas Technology Corp

Il numero della parte 2SJ221-E
Spiegazioni elettronici  Silicon P Channel MOS FET
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Produttore elettronici  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SJ221-E Scheda tecnica(HTML) 5 Page - Renesas Technology Corp

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2SJ221
Rev.2.00 Sep 07, 2005 page 5 of 6
–50
0
–10
–20
–30
–40
0
Source to Drain Voltage
VSD
(V)
Reverse Drain Current vs.
Source to Drain Voltage
–0.4
–0.8
–1.2
–1.6
–2.0
Pulse Test
10 V
5 V
VGS = 0, 5 V
tr
td(on)
Vin
90%
90%
10%
10%
Vout
td(off)
90%
10%
tf
Switching Time Test Circuit
Waveform
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
0.3
0.1
0.03
0.01
10
µ
100
µ
1 m
10 m
100 m
1
10
Tc = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot
pulse
PDM
PW
T
D =
PW
T
θch – c (t) = γ s (t) • θch – c
θch – c = 1.67°C/W, Tc = 25°C
Vin Monitor
D.U.T.
Vin
–10 V
RL
Vout
Monitor
50
VDD
= –30 V


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