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2SJ221-E Scheda tecnica(PDF) 5 Page - Renesas Technology Corp |
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2SJ221-E Scheda tecnica(HTML) 5 Page - Renesas Technology Corp |
5 / 7 page 2SJ221 Rev.2.00 Sep 07, 2005 page 5 of 6 –50 0 –10 –20 –30 –40 0 Source to Drain Voltage VSD (V) Reverse Drain Current vs. Source to Drain Voltage –0.4 –0.8 –1.2 –1.6 –2.0 Pulse Test –10 V –5 V VGS = 0, 5 V tr td(on) Vin 90% 90% 10% 10% Vout td(off) 90% 10% tf Switching Time Test Circuit Waveform Pulse Width PW (S) Normalized Transient Thermal Impedance vs. Pulse Width 3 1 0.3 0.1 0.03 0.01 10 µ 100 µ 1 m 10 m 100 m 1 10 Tc = 25°C D = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse PDM PW T D = PW T θch – c (t) = γ s (t) • θch – c θch – c = 1.67°C/W, Tc = 25°C Vin Monitor D.U.T. Vin –10 V RL Vout Monitor 50 Ω VDD = –30 V |
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