2SJ181L-E datasheet(3/8 Pages) RENESAS

Il numero della parte	2SJ181L-E

Spiegazioni elettronici	Silicon P Channel MOS FET

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Produttore elettronici	RENESAS [Renesas Technology Corp]

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3 / 8 page

2SJ181(L), 2SJ181(S)

Rev.2.00 Sep 07, 2005 page 3 of 7

Main Characteristics

Case Temperature

Tc (°C)

Power vs. Temperature Derating

Drain to Source Voltage

VDS (V)

Typical Output Characteristics

Gate to Source Voltage

VGS (V)

Typical Transfer Characteristics

–1.0

0

–0.2

–0.4

–0.6

–0.8

0

–10

–20

–30

–40

–50

–0.5

0

–0.1

–0.2

–0.3

–0.4

0

–2–4–6–8

–10

Tc = –25°C

25°C

75°C

40

0

10

20

30

0

50

100

150

200

VDS = –20 V

Pulse Test

–10 V

–4.5 V

–5 V

VGS = –4 V

Pulse Test

Drain to Source Voltage

VDS (V)

Maximum Safe Operation Area

–3

–1

–0.3

–0.1

–0.01

–0.03

–10

–20

–50 –100 –200

–500 –1000

–10

Ta = 25°C

10

µs

PW

= 10

ms

(1

shot)

DC

Oper

ation

(Tc

= 25°C)

1 ms

100

µs

Operation in

this area is

limited by RDS (on)

Gate to Source Voltage

VGS (V)

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

–20

0

–4

–8

–12

–16

0

–4

–8

–12

–16

–20

Pulse Test

ID = –0.5 A

–0.1 A

–0.2 A

Drain Current

ID (A)

Static Drain to Source on State Resistance

vs. Drain Current

100

50

10

20

5

–0.1

–0.5

–1

–0.02

–0.2

–2

–0.05

500

200

VGS = –10 V

–15 V

Pulse Test

–6 V

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