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STB300NH02L Scheda tecnica(PDF) 3 Page - STMicroelectronics

Il numero della parte STB300NH02L
Spiegazioni elettronici  N-channel 24V - 120A - TO-220 / D2PAK STripFET??Power MOSFET
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB300NH02L Scheda tecnica(HTML) 3 Page - STMicroelectronics

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STB300NH02L - STP300NH02L
Electrical ratings
3/14
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
24
V
VGS
Gate-source voltage
± 20
V
ID
(1)
1.
This value is silicon limited
Drain current (continuous) at TC = 25°C
120
A
ID
(1)
Drain current (continuous) at TC = 100°C
120
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
480
A
PTOT
(3)
3.
This value is rated according Rthj-case
Total dissipation at TC = 25°C
300
W
Derating factor
2
W/°C
Tj
Operating junction temperature
-55 to 175
°C
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case max
0.5
°C/W
Rthj-amb
Thermal resistance junction-ambient max
62.5
°C/W
Table 4.
Avalanche characteristics
Symbol
Parameter
Max value
Unit
IAV
Not-repetitive avalanche current
(pulse width limited by Tj max)
60
A
EAS
(1)
1.
Starting Tj = 25°C, ID = IAV, VDD = 20V
Single pulse avalanche energy
1.6
J


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