STP185N10F3 datasheet(4/12 Pages) STMICROELECTRONICS

Il numero della parte	STP185N10F3

Spiegazioni elettronici	N-channel 100 V, 4.0 m廓, 120 A, D2PAK, TO-220 STripFET??Power MOSFET

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Electrical characteristics

STB185N10F3 - STP185N10F3

4/12

2

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS= 0

100

V

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS= max rating,

VDS= max rating,@125°C

10

100

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20 V

±

200

nA

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

2

4

V

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 60 A

D²PAK

TO-220

4.5

4.8

m

Ω

m

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0

TBD

pF

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 80 V, ID = 120 A,

VGS = 10 V

(see

Figure 3)

100

TBD

nC

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 50 V, ID = 60 A

RG =4.7 Ω VGS = 10 V

(see

Figure 2, Figure 7)

TBD

ns

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