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STB230NH03L Scheda tecnica(PDF) 4 Page - STMicroelectronics |
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STB230NH03L Scheda tecnica(HTML) 4 Page - STMicroelectronics |
4 / 13 page Electrical characteristics STB230NH03L 4/13 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1mA, VGS= 0 30 V IDSS Zero gate voltage drain current (VGS = 0) VDS = 30V, VDS = 30V,Tc=125°C 1 10 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±20V ± 100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA 11.5 2.5 V RDS(on) Static drain-source on resistance VGS= 10V, ID= 40A 2.3 3 m Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =10V, f=1 MHz, VGS=0 4700 1600 85 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=15V, ID = 60A VGS =10V (see Figure 13) 72 15 11 nC nC nC RG Gate input resistance f=1 MHz Gate DC Bias = 0 Test signal level = 20mV open drain 5.5 Ω |
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