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STB30NM60N Scheda tecnica(PDF) 5 Page - STMicroelectronics

Il numero della parte STB30NM60N
Spiegazioni elettronici  N-channel 600 V, 0.1 廓, 25 A, MDmesh??II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB30NM60N Scheda tecnica(HTML) 5 Page - STMicroelectronics

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STB30NM60N,STI30NM60N,STF30NM60N,STP30NM60N,STW30NM60N Electrical characteristics
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Table 7.
Switching times
Symbol
Parameter
Test conditions
Min. Typ.
Max Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
VDD = 300 V, ID = 12.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 18)
20
24
125
70
ns
ns
ns
ns
Table 8.
Source drain diode
Symbol
Parameter
Test conditions
Min
Typ.
Max Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
25
100
A
A
VSD
(2)
2.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward on voltage
ISD = 25 A, VGS = 0
1.3
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 25 A, di/dt = 100 A/µs
VDD= 100 V (see Figure 23)
540
10
36
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 25 A, di/dt = 100 A/µs
VDD= 100 V Tj = 150°C
(see Figure 23)
630
12
36
ns
µC
A


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