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STB30NM60N Scheda tecnica(PDF) 5 Page - STMicroelectronics |
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STB30NM60N Scheda tecnica(HTML) 5 Page - STMicroelectronics |
5 / 18 page STB30NM60N,STI30NM60N,STF30NM60N,STP30NM60N,STW30NM60N Electrical characteristics 5/18 Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off-delay time Fall time VDD = 300 V, ID = 12.5 A, RG = 4.7 Ω, VGS = 10 V (see Figure 18) 20 24 125 70 ns ns ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) 25 100 A A VSD (2) 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward on voltage ISD = 25 A, VGS = 0 1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 25 A, di/dt = 100 A/µs VDD= 100 V (see Figure 23) 540 10 36 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 25 A, di/dt = 100 A/µs VDD= 100 V Tj = 150°C (see Figure 23) 630 12 36 ns µC A |
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