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2SD1367BCTR-E Scheda tecnica(PDF) 1 Page - Renesas Technology Corp |
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2SD1367BCTR-E Scheda tecnica(HTML) 1 Page - Renesas Technology Corp |
1 / 6 page Rev.2.00 Aug 10, 2005 page 1 of 5 2SD1367 Silicon NPN Epitaxial REJ03G0785-0200 (Previous ADE-208-1147) Rev.2.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SB1001 Outline 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 4 1 2 3 RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) Note: Marking is “BC“. *UPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 16 V Emitter to base voltage VEBO 6 V Collector current IC 2 A Collector peak current iC(peak)* 1 3 A Collector power dissipation PC* 2 1 W Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20%. 2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm) |
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