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2SK3419-E Scheda tecnica(PDF) 2 Page - Renesas Technology Corp |
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2SK3419-E Scheda tecnica(HTML) 2 Page - Renesas Technology Corp |
2 / 8 page 2SK3419 Rev.2.00 Sep 07, 2005 page 2 of 7 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Value Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS ±20 V Drain current ID 90 A Drain peak current ID (pulse) Note 1 360 A Body-drain diode reverse drain current IDR 90 A Avalanche current IAP Note 3 65 A Avalanche energy EAR Note 3 362 mJ Channel dissipation Pch Note 2 150 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25 °C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR) DSS 60 — — V ID = 10 mA, VGS = 0 Zero gate voltage drain current IDSS — — 10 µA VDS = 60 V, VGS = 0 Gate to source leak current IGSS — — ±0.1 µA VGS = ±20 V, VDS = 0 Gate to source cutoff voltage VGS (off) 1.0 — 2.5 V VDS = 10 V, ID = 1 mA Note 4 Forward transfer admittance |yfs| 55 90 — S ID = 45 A, VDS = 10 V Note 4 RDS (on) — 4.3 5.5 m Ω ID = 45 A, VGS = 10 V Note 4 Static drain to source on state resistance RDS (on) — 6.0 9.0 m Ω ID = 45 A, VGS = 4 V Note 4 Input capacitance Ciss — 9770 — pF Output capacitance Coss — 1340 — pF Reverse transfer capacitance Crss — 470 — pF VDS = 10 V VGS = 0 f = 1 MHz Total gate charge Qg — 180 — nC Gate to source charge Qgs — 32 — nC Gate to drain charge Qgd — 36 — nC VDD = 50 V VGS = 10 V ID = 90 A Turn-on delay time td (on) — 53 — ns Rise time tr — 320 — ns Turn-off delay time td (off) — 700 — ns Fall time tf — 380 — ns VGS = 10 V ID = 45 A RL = 0.67 Ω Body-drain diode forward voltage VDF — 1.0 — V IF = 90 A, VGS = 0 Body-drain diode reverse recovery time trr — 75 — ns IF = 90 A, VGS = 0 diF/dt = 50 A/ µs Note: 4. Pulse test |
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