2SC2620 datasheet(5/8 Pages) RENESAS

Il numero della parte	2SC2620

Spiegazioni elettronici	Silicon NPN Epitaxial Planar

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Produttore elettronici	RENESAS [Renesas Technology Corp]

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2SC2620

Rev.2.00 Aug 10, 2005 page 5 of 7

Input Admittance Characteristics

Input Conductance gie (mS)

yie = gie + jbie

VCE = 6 V

f = 200 MHz

IC = 1 mA

150

50

70

100

200

2 mA

3 mA

5 mA

50 MHz

18

16

14

12

10

8

6

4

2

02

8

14

612

18

410

16

Reverse Transfer Admittance

Characteristics

f = 50 MHz

70

100

150

200

IC = 5 mA 3 2 1

–1.0

–0.8

–0.6

–0.4

–0.2

0

–0.04

–0.16

–0.12

–0.08

Reverse Transfer Conductance gre (mS)

yre = gre + jbre

VCE = 6 V

–0.20

Forward Transfer Admittance

Characteristics

–120

–100

–80

–60

–40

–20

IC = 1 mA

2 mA

3 mA

5 mA

200

150

100

70

020

60

40

80

120

100

Forward Transfer Conductance gfe (mS)

f = 50 MHz

yfe = gfe + jbfe

VCE = 6 V

Output Admittance Characteristics

Output Conductance goe (mS)

yoe = goe + jboe

VCE = 6 V

IC = 1 mA 23

5

2.4

2.0

1.6

1.2

0.8

0.4

00.1

0.6

0.4

0.3

0.2

0.5

150

100

70

50

f = 200 MHz

Input Admittance vs. Collector

to Emitter Voltage

Collector to Emitter Voltage VCE (V)

10

5

2

1.0

0.5

15

20

210

yie = gie + jbie

IC = 1 mA

f = 100 MHz

bie

gie

Input Admittance vs. Collector Current

Collector Current IC (mA)

yie = gie + jbie

VCE = 6 V

f = 100 MHz

20

10

5

2

1.0

0.5

0.2

0.1

0.5

2

10

0.2

1.0

5

bie

gie

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