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2SC2610TZ-E Scheda tecnica(PDF) 3 Page - Renesas Technology Corp

Il numero della parte 2SC2610TZ-E
Spiegazioni elettronici  Silicon NPN Triple Diffused
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Produttore elettronici  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC2610TZ-E Scheda tecnica(HTML) 3 Page - Renesas Technology Corp

  2SC2610TZ-E Datasheet HTML 1Page - Renesas Technology Corp 2SC2610TZ-E Datasheet HTML 2Page - Renesas Technology Corp 2SC2610TZ-E Datasheet HTML 3Page - Renesas Technology Corp 2SC2610TZ-E Datasheet HTML 4Page - Renesas Technology Corp 2SC2610TZ-E Datasheet HTML 5Page - Renesas Technology Corp 2SC2610TZ-E Datasheet HTML 6Page - Renesas Technology Corp  
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2SC2610
Rev.2.00 Aug 10, 2005 page 3 of 5
Main Characteristics
0
50
100
150
200
Ambient Temperature Ta (°C)
Maximum Collector Dissipation Curve
200
400
600
800
Typical Output Characteristics
0.2
0.4
1.0
0.6
0.8
Collector to Emitter Voltage VCE (V)
0
0.4
0.8
1.2
1.6
2.0
16
14
12
10
8
6
4
2
µA
IB = 0
Typical Transfer Characteristics
5
2
1
10
100
20
50
Base to Emitter Voltage VBE (V)
0
0.2
0.4
0.6
0.8
1.0
VCE = 20 V
DC Current Transfer Ratio vs.
Collector Current
0
20
40
100
60
80
Collector Current IC (mA)
12
5
10
20
50
100
VCE = 20 V
Pulse
Ta =
75°
C
25
–25
Collector to Emitter Saturation
Voltage vs. Collector Current
0.1
0.2
0.5
10
1.0
2
5
Collector Current IC (mA)
12
5
10
20
50
100
IC = 10 IB
Pulse
Gain Bandwidth Product vs.
Collector Current
Collector Current IC (mA)
12
5
10
20
100
50
0
20
40
60
80
100
VCE = 20 V


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