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2SK2929-E Scheda tecnica(PDF) 4 Page - Renesas Technology Corp |
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2SK2929-E Scheda tecnica(HTML) 4 Page - Renesas Technology Corp |
4 / 8 page 2SK2929 Rev.5.00 Sep 07, 2005 page 4 of 7 Case Temperature TC (°C) Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Drain Current ID (A) Body to Drain Diode Reverse Recovery Time Reverse Drain Current IDR (A) Typical Capacitance vs. Drain to Source Voltage Drain to Source Voltage VDS (V) Dynamic Input Characteristics Gate Charge Qg (nc) Switching Characteristics Drain Current ID (A) 0.10 0.08 0.06 0.04 0.02 –40 0 40 80 120 160 0 VGS = 4 V 10 V 2, 5 A 10 A 2, 5, 10 A Pulse Test 0.1 0.3 1 3 10 30 100 50 20 5 10 1 2 0.5 25 °C Tc = –25 °C 75 °C VDS = 10 V Pulse Test 0.1 0.3 1 3 10 30 100 1000 500 50 100 20 10 200 di / dt = 50 A / µs VGS = 0, Ta = 25 °C 010 20 30 40 50 2000 5000 1000 100 200 500 10 20 50 VGS = 0 f = 1 MHz Ciss Coss Crss 100 80 60 40 20 0 20 16 12 8 4 8 1624 3240 0 ID = 25 A VGS VDS VDD = 50 V 25 V 10 V VDD = 50 V 25 V 10 V 1000 300 30 100 3 10 1 0.1 0.3 1 3 10 30 100 VGS = 10 V, VDD = 30 V PW = 5 µs, duty < 1 % tf tr td(on) td(off) |
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