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2SK2796L-E Scheda tecnica(PDF) 4 Page - Renesas Technology Corp |
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2SK2796L-E Scheda tecnica(HTML) 4 Page - Renesas Technology Corp |
4 / 9 page 2SK2796(L), 2SK2796(S) Rev.5.00 Sep 07, 2005 page 4 of 8 Case Temperature TC (°C) Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Drain Current ID (A) Body to Drain Diode Reverse Recovery Time Reverse Drain Current IDR (A) Typical Capacitance vs. Drain to Source Voltage Drain to Source Voltage VDS (V) Dynamic Input Characteristics Gate Charge Qg (nc) Switching Characteristics Drain Current ID (A) 0.5 0.4 0.3 0.2 0.1 –40 0 40 80 120 160 0 0.1 0.2 0.5 1 2 5 10 10 5 1 2 0.2 0.5 0.1 ID = 5 A VGS = 4 V 10 V 1, 2 A 1 A 2 A 5 A 25 °C Tc = –25 °C 75 °C Pulse Test VDS = 10 V Pulse Test 0.1 0.2 0.5 1 2 5 10 010 20 30 40 50 1000 200 500 100 10 20 50 100 80 60 40 20 0 20 16 12 8 4 246 8 10 0 100 50 10 20 2 5 1 500 200 50 100 10 20 5 di / dt = 50 A / µs VGS = 0, Ta = 25°C VGS = 0 f = 1 MHz Ciss Coss Crss ID = 5 A VGS VDS VDD = 50 V 25 V 10 V VDD = 10 V 25 V 50 V 0.1 0.2 0.5 1 2 5 10 VGS = 10 V, VDD = 30 V PW = 5 µs, duty < 1 % tf tr td(on) td(off) |
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