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2SK2586-E Scheda tecnica(PDF) 4 Page - Renesas Technology Corp |
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2SK2586-E Scheda tecnica(HTML) 4 Page - Renesas Technology Corp |
4 / 8 page 2SK2586 Rev.5.00 Sep 07, 2005 page 4 of 7 Case Temperature TC (°C) Static Drain to Source on State Resistance vs. Temperature Drain Current ID (A) Forward Transfer Admittance vs. Drain Current Body to Drain Diode Reverse Recovery Time Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage Gate Charge Qg (nc) Dynamic Input Characteristics Drain Current ID (A) Switching Characteristics 0.04 0.032 0.024 0.016 0.008 –40 0 40 80 120 160 0 Pulse Test ID = 50 A VGS = 4 V 10 V 10, 20 A 10, 20, 50 A 0.1 0.3 1 3 10 30 100 VDS = 10 V Pulse Test 500 100 200 20 50 10 2 5 1 0.5 25 °C Tc = –25 °C 75 °C 0.1 0.3 1 3 10 30 100 5000 2000 1000 200 500 100 20 50 10 5 di / dt = 50 A / µs VGS = 0, Ta = 25°C 010 20 30 40 50 10000 2000 5000 1000 100 200 500 VGS = 0 f = 1 MHz Ciss Coss Crss 100 80 60 40 20 0 20 16 12 8 4 40 80 120 160 200 0 VDD = 10 V 25 V 50 V ID = 50 A VGS VDS VDD = 50 V 25 V 10 V 5000 2000 1000 200 500 100 20 10 50 5 0.1 0.3 1 3 10 30 100 VGS = 10 V, VDD = 30 V PW = 5 µs, duty < 1 % tf tr td(on) td(off) |
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