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2SK1957-E Scheda tecnica(PDF) 4 Page - Renesas Technology Corp

Il numero della parte 2SK1957-E
Spiegazioni elettronici  Silicon N Channel MOS FET
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Produttore elettronici  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SK1957-E Scheda tecnica(HTML) 4 Page - Renesas Technology Corp

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2SK1957
Rev.2.00 Sep 07, 2005 page 4 of 6
Case Temperature TC (°C)
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
vs. Drain Current
Drain Current ID (A)
Body to Drain Diode Reverse
Recovery Time
Reverse Drain Current IDR (A)
Typical Capacitance
vs. Drain to Source Voltage
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Gate Charge Qg (nc)
Switching Characteristics
Drain Current ID (A)
–40
0
40
80
120
0
0.2
0.4
0.6
0.8
1.0
160
Pulse Test
I = 5 A
D
1 A, 2 A
0.1
0.5
2
50
20
10
5
2
0.5
0.2
1
10
V
= 10 V
Pulse Test
DS
75
°C
Tc = 25
°C
1
–25
°C
5
0.2
1
5
20
5
100
500
200
50
20
10
0.5
2
10
di/dt = 100 A/ s, V
= 0
Ta = 25
°C
µ
GS
100
10
1
0
1000
10
20
30
40
50
Ciss
Coss
Crss
V
= 0
f = 1 MHz
GS
816
24
32
40
100
200
400
500
4
8
12
16
20
0
0
300
I = 7 A
D
V
= 150 V
100 V
50 V
DD
DD
V
GS
V
DS
V
= 150 V
100 V
50 V
0.1
500
200
100
50
20
10
5
0.2
1
2
10
td(off)
td(on)
t
tf
r
5
0.5
VGS = 10 V, VDD = 30 V
PW = 2
µs, duty ≤ 1 %


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