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2SK1957-E Scheda tecnica(PDF) 4 Page - Renesas Technology Corp |
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2SK1957-E Scheda tecnica(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page 2SK1957 Rev.2.00 Sep 07, 2005 page 4 of 6 Case Temperature TC (°C) Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Drain Current ID (A) Body to Drain Diode Reverse Recovery Time Reverse Drain Current IDR (A) Typical Capacitance vs. Drain to Source Voltage Drain to Source Voltage VDS (V) Dynamic Input Characteristics Gate Charge Qg (nc) Switching Characteristics Drain Current ID (A) –40 0 40 80 120 0 0.2 0.4 0.6 0.8 1.0 160 Pulse Test I = 5 A D 1 A, 2 A 0.1 0.5 2 50 20 10 5 2 0.5 0.2 1 10 V = 10 V Pulse Test DS 75 °C Tc = 25 °C 1 –25 °C 5 0.2 1 5 20 5 100 500 200 50 20 10 0.5 2 10 di/dt = 100 A/ s, V = 0 Ta = 25 °C µ GS 100 10 1 0 1000 10 20 30 40 50 Ciss Coss Crss V = 0 f = 1 MHz GS 816 24 32 40 100 200 400 500 4 8 12 16 20 0 0 300 I = 7 A D V = 150 V 100 V 50 V DD DD V GS V DS V = 150 V 100 V 50 V 0.1 500 200 100 50 20 10 5 0.2 1 2 10 td(off) td(on) t tf r 5 0.5 VGS = 10 V, VDD = 30 V PW = 2 µs, duty ≤ 1 % |
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