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2SK1620STL-E Scheda tecnica(PDF) 2 Page - Renesas Technology Corp |
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2SK1620STL-E Scheda tecnica(HTML) 2 Page - Renesas Technology Corp |
2 / 8 page 2SK1620(L), 2SK1620(S) Rev.2.00 Sep 07, 2005 page 2 of 7 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 150 V Gate to source voltage VGSS ±20 V Drain current ID 10 A Drain peak current ID(pulse) *1 40 A Body to drain diode reverse drain current IDR 10 A Channel dissipation Pch *2 50 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS 150 — — V ID = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 Zero gate voltage drain current IDSS — — 250 µA VDS = 120 V, VGS = 0 Gate to source cutoff voltage VGS(off) 2.0 — 4.0 V ID = 1 mA, VDS = 10 V Static drain to source on state resistance RDS(on) — 0.12 0.15 Ω ID = 5 A, VGS = 10 V * 3 Forward transfer admittance |yfs| 4.0 7.0 — S ID = 5 A, VDS = 10 V * 3 Input capacitance Ciss — 1200 — pF Output capacitance Coss — 550 — pF Reverse transfer capacitance Crss — 85 — pF VDS = 10 V, VGS = 0, f = 1 MHz Turn-on delay time td(on) — 20 — ns Rise time tr — 50 — ns Turn-off delay time td(off) — 70 — ns Fall time tf — 40 — ns ID = 5 A, VGS = 10 V, RL = 6 Ω Body to drain diode forward voltage VDF — 1.2 — V IF = 10 A, VGS = 0 Body to drain diode reverse recovery time trr — 220 — ns IF = 10 A, VGS = 0, diF/dt = 50 A/ µs Note: 3. Pulse test |
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