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2SK1519 Scheda tecnica(PDF) 4 Page - Renesas Technology Corp

Il numero della parte 2SK1519
Spiegazioni elettronici  Silicon N Channel MOS FET
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Produttore elettronici  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SK1519 Scheda tecnica(HTML) 4 Page - Renesas Technology Corp

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2SK1519, 2SK1520
Rev.3.00 Apr 27, 2006 page 4 of 6
0.5
40
160
Case Temperature TC (°C)
0.4
0.1
0
80
120
0
0.2
0.3
Static Drain to Source on State
Resistance vs. Temperature
ID = 50 A
VGS = 10 V
Pulse Test
–40
20 A
10 A
100
150
Drain Current ID (A)
50
5
0.5
2
10
1
10
20
Forward Transfer Admittance
vs. Drain Current
VDS = 10 V
Pulse Test
2
520
75
°C
25
°C
TC = –25°C
500
10
Reverse Drain Current IDR (A)
200
20
1
50
100
Body to Drain Diode Reverse
Recovery Time
di/dt = 100 A/
µs, V
GS = 0
Pulse Test
10
0.5
2
20
50
5
1,000
10,000
20
50
Drain to Source Voltage VDS (V)
100
10
30
40
Typical Capacitance vs.
Drain to Source Voltage
0
10
Crss
Coss
Ciss
VGS = 0
f = 1 MHz
1,000
1,000
160
400
Gate Charge Qg (nc)
800
80
240
0
320
600
400
200
ID = 30 A
Pulse Test
VDD = 400 V
Dynamic Input Characteristics
250 V
VGS
20
16
12
8
4
0
0
VDS
100 V
VDD = 100 V
250 V
400 V
1,000
250
Drain Current ID (A)
500
50
15
20
10
100
200
0.5
20
10
Switching Characteristics
tf
td (off)
tr
VGS = 10 V, PW = 2 µs
duty < 1%, VDD 30 V
=
.
.
td (on)


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