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2SK1316L Scheda tecnica(PDF) 4 Page - Renesas Technology Corp |
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2SK1316L Scheda tecnica(HTML) 4 Page - Renesas Technology Corp |
4 / 8 page 2SK1316(L), 2SK1316(S) Rev.2.00 Sep 07, 2005 page 4 of 7 2.0 40 160 Case Temperature TC (°C) 1.6 0.4 0 80 120 0 0.8 1.2 Static Drain to Source on State Resistance vs. Temperature ID = 10 A VGS = 10 V Pulse Test 2, 5 A –40 50 0.5 10 Drain Current ID (A) 20 2 0.2 1.0 5 0.5 5 10 Forward Transfer Admittance vs. Drain Current VDS = 20 V Pulse Test 0.1 1.0 2 –25 °C TC = 25°C 75 °C 5,000 1.0 20 Reverse Drain Current IDR (A) 2,000 200 0.5 2 10 50 500 1,000 Body to Drain Diode Reverse Recovery Time 0.2 100 5 di/dt = 100 A/ µs, Ta = 25°C VGS = 0 Pulse Test 10,000 20 50 Drain to Source Voltage VDS (V) 100 10 30 40 10 1,000 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz 0 Ciss Coss Crss 500 40 100 Gate Charge Qg (nc) Dynamic Input Characteristics 400 100 20 60 80 0 200 300 VDS 20 16 4 0 8 12 VDD = 100 V 250 V 400 V ID = 8 A 250 V VDD = 400 V VGS 100 V 500 1.0 20 Drain Current ID (A) 200 20 0.5 2 10 5 50 100 0.2 10 5 Switching Characteristics td (off) tf tr td (on) VGS = 10 V, VDD = 30 V PW = 2 µs, duty < 1% • • |
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