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2SK1305-E Scheda tecnica(PDF) 3 Page - Renesas Technology Corp

Il numero della parte 2SK1305-E
Spiegazioni elettronici  Silicon N Channel MOS FET
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Produttore elettronici  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SK1305-E Scheda tecnica(HTML) 3 Page - Renesas Technology Corp

  2SK1305-E Datasheet HTML 1Page - Renesas Technology Corp 2SK1305-E Datasheet HTML 2Page - Renesas Technology Corp 2SK1305-E Datasheet HTML 3Page - Renesas Technology Corp 2SK1305-E Datasheet HTML 4Page - Renesas Technology Corp 2SK1305-E Datasheet HTML 5Page - Renesas Technology Corp 2SK1305-E Datasheet HTML 6Page - Renesas Technology Corp 2SK1305-E Datasheet HTML 7Page - Renesas Technology Corp  
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2SK1305
Rev.2.00 Sep 07, 2005 page 3 of 6
Main Characteristics
Typical Output Characteristics
Drain to Source Voltage VDS (V)
20
16
12
8
4
20
16
12
8
4
0
VGS = 2.5 V
Pulse Test
6 V
3 V
3.5 V
10 V
4 V
Typical Transfer Characteristics
3
Gate to Source Voltage VGS (V)
4
2
1
05
2
4
6
8
10
0
VDS = 10 V
Pulse Test
25
°C
–25
°C
TC = 75°C
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
6
Gate to Source Voltage VGS (V)
8
4
2
010
1.0
1.5
2.0
2.5
0
0.5
Pulse Test
ID = 2 A
5 A
10 A
5
Drain Current ID (A)
10
2
150
0.2
0.5
1
2
5
0.5
0.1
0.05
20
Static Drain to Source on State
Resistance vs. Drain Current
VGS = 4 V
10 V
Pulse Test
30
20
10
0
50
100
150
Case Temperature TC (°C)
Power vs. Temperature Derating
100
10
100
1,000
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
30
1.0
1
Ta = 25
°C
DC
Operation
(T
C =
25
°C)
10
3
0.3
0.1
3
30
300
Operation
in
this
Area
is Limited
by
R
DS
(on)


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