2SK975TZ-E datasheet(4/7 Pages) RENESAS

Il numero della parte	2SK975TZ-E

Spiegazioni elettronici	Silicon N Channel MOS FET

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Produttore elettronici	RENESAS [Renesas Technology Corp]

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2SK975

Rev.2.00 Sep 07, 2005 page 4 of 6

80

Case Temperature TC (°C)

120

40

0

0.2

0.4

0.6

0.8

1.0

–40

0

160

Static Drain to Source on State

Resistance vs. Temperature

ID = 2 A

Pulse Test

VGS = 4 V

VGS = 10 V

0.5 A

1 A

0.5 A

2 A

Forward Transfer Admittance

vs. Drain Current

5

2

1.0

0.5

0.2

0.1

0.05

0.1

0.2

0.5

1.0

5

Drain Current ID (A)

2

TC = 25°C

VDS = 10 V

Pulse Test

–25

°C

75

°C

1000

500

200

100

50

20

10

0.05

0.1

0.5

5

Reverse Drain Current IDR (A)

1.0

0.2

2

Body to Drain Diode Reverse

Recovery Time

di/dt = 50 A/

µs, Ta = 25°C

VGS = 0

Pulse Test

Typical Capacitance vs.

Drain to Source Voltage

1000

300

100

30

3

1

010

20

50

Drain to Source Voltage VDS (V)

30

10

40

VGS = 0

f = 1 MHz

Ciss

Coss

Crss

100

80

60

40

20

02

6

8

Gate Charge Qg (nc)

4

20

16

12

8

4

Dynamic Input Characteristics

10

0

VDS

VGS

VDD = 50 V

10 V

25 V

VDD = 50 V

25 V

10 V

ID = 1.5 A

Switching Characteristics

100

50

20

10

2

1

0.05

0.1

0.5

5

Drain Current ID (A)

1.0

0.2

2

5

td (off)

tf

VGS = 10 V VDD = 30 V

PW = 2

µs, duty < 1 %

td (on)

tr

•

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